Transistors
2SB1589
Silicon PNP epitaxial planar type
For low-frequency output amplification
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Large collector power dissipation PC
• Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−10
V
Collector-emitter voltage (Base open) VCEO
−10
V
Emitter-base voltage (Collector open) VEBO
−7
V
Collector current
IC
−1.5
A
Peak collector current
ICP
−2
A
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
Note) *: Print circuit board: Copper foil area of 1 cm2 or more, and the board
thickness of 1.7 mm for the collector portion
4.5±0.1
1.6±0.2
Unit: mm
1.5±0.1
1
0.4±0.08
1.5±0.1
23
0.5±0.08
3˚
0.4±0.04
45˚
3.0±0.15
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Marking Symbol: 1U
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emiter open) VCBO IC = −10 µA, IE = 0
−10
V
Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0
−10
V
Emiter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
−7
V
Collector-base cutoff current (Emitter open) ICBO VCB = −7 V, IE = 0
−1
µA
Forward current transfer ratio *1
hFE VCE = −1 V, IC = −400 mA
200
700
Collector-emitter saturation voltage *1 VCE(sat) IC = −1 A, IB = −25 mA
− 0.24 − 0.35 V
Transition frequency
fT
VCB = −6 V, IE = 50 mA, f = 200 MHz
190
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
65
pF
Forward voltage *2
VF IF = − 500 mA
−1.3
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Applicable to the built-in diode
Publication date: December 2002
SJC00093CED
1