2SB1593 Ver la hoja de datos (PDF) - Panasonic Corporation
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2SB1593 Datasheet PDF : 3 Pages
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Power Transistors
2SB1593
Silicon PNP epitaxial planar type
For low-frequency output amplification
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Allowing automatic insertion with radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−29
V
Collector-emitter voltage
VCER
−29
V
(Resistor between B and E)
Collector-emitter voltage (Base open) VCEO
−20
V
Emitter-base voltage (Collector open) VEBO
−11
V
Collector current
IC
−3
A
Peak collector current
ICP
−10
A
Collector power dissipation
PC
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 ∼ +150 °C
7.5±0.2
Unit: mm
4.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
0.85±0.1
1.0±0.1 0.8 C
0.7±0.1
1.15±0.2
0.8 C
0.5±0.1
0.4±0.1
0.8 C 1 2 3
2.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-base voltage (Emiter open) VCBO IC = −10 µA, IE = 0
−29
Collector-emitter voltage
VCER IC = −1 mA, RBE = 10 kΩ
−29
(Resistor between B and E)
Collector-emitter voltage (Base open)
Emiter-base voltage (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCEO IC = −1 mA, IB = 0
−20
VEBO IE = −10 µA, IC = 0
−11
hFE VCE = −2 V, IC = −2.6 A
100
VCE(sat) IC = −2.6 A, IB = −40 mA
fT
VCB = −10 V, IE = 50 mA, f = 200 MHz
Cob VCB = −10 V, IE = 0, f = 1 MHz
Typ Max
− 0.3
200
110
450
− 0.5
150
Unit
V
V
V
V
V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2003
SJD00085BED
1
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