2SB1556 Ver la hoja de datos (PDF) - Inchange Semiconductor

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2SB1556

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

2SB1556

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -140V(Min)

·High DC Current Gain-

: hFE= 5000(Min)@IC= -7A

·Complement to Type 2SD2385

APPLICATIONS

·Designed for power amplifier applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-140

V

VCEO

Collector-Emitter Voltage

-140

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-8

A

IBB

Base Current-Continuous

Collector Power Dissipation

PC

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-0.1

A

120

W

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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