2SB550 Ver la hoja de datos (PDF) - SavantIC Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SB550

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB550

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A

VBEsat

Base-emitter saturation voltage

IC=-5A; IB=-0.5A

ICBO

Collector cut-off current

VCB=-80V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-1A ; VCE=-5V

fT

Transition frequency

IC=-0.1A ; VCE=-10V

MIN TYP. MAX UNIT

-100

V

-70

V

-5

V

-1.0

V

-1.5

V

-0.1 mA

-0.1 mA

30

200

5

MHz

2

Share Link: