SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB628
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-0.1mA; IE=0
V(BR)EBO Emitter-base breakdown votage
IE=-0.1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=-0.3 A;IB=-30m A
VBE
Base-emitter voltage
IC=-0.3A ; VCE=-4V
ICBO
Collector cut-off current
VCB=-120V; IE=0
IEBO
Emitter cut-off current
VEB=-4V; IC=0
hFE
DC current gain
IC=-0.3A ; VCE=-5V
fT
Transition frequency
IC=-0.3A ; VCE=-5V
MIN TYP. MAX UNIT
-160
V
-160
V
-5
V
-1.0
V
-1.0
V
-1
µA
-1
µA
40
200
40
MHz
2