SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1051
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
VBE
Base-emitter on voltage
IC=1A ; VCE=5V
ICBO
Collector cut-off current
VCB=150V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=5V
MIN TYP. MAX UNIT
100
V
150
V
5
V
2.0
V
1.5
V
0.1 mA
0.1 mA
40
320
8
MHz
u hFE Classifications
C
D
E
F
40-80 60-120 100-200 160-320
2