2SC2590 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SC2590 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2590
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=100μA;IB=0
120
V
V(BR)EBO Emitter-base breakdown voltage
IE=10μA ;IC=0
5
V
VCEsat Collector-emitter saturation voltage IC=0.3A ;IB=30mA
1.0
V
VBEsat Base-emitter saturation voltage
IC=0.3A ;IB=30mA
1.2
V
hFE-1
DC current gain
IC=150mA ; VCE=10V
90
220
hFE-2
DC current gain
IC=0.5A ; VCE=5V
65
100
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
20
pF
fT
Transition frequency
固IN电C半H导AN体GE SEMICONDUCTOR hFE-1 Classifications
Q
R
90-155
130-220
IC=50mA ; VCB=10V,f=200MHz
200
MHz
2
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