2SC2920 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SC2920

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞

V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ; IC=0

VCE(sat) Collector-emitter saturation voltage IC=10A; IB=1A

VBE(sat) Base-emitter saturation voltage

IC=10A; IB=1A

ICBO

Collector cut-off current

VCB=450V ;IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=10A ; VCE=2V

fT

Transition frequency

IC=2A ; VCE=10V

COB

Collector output capacitance

IE=0 ; VCB=10V,f=1MHz

Product Specification

2SC2920

MIN TYP. MAX UNIT

400

V

450

V

7

V

1.0

V

1.5

V

100 μA

100 μA

10

30

30

MHz

240

pF

2

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