2SC3058 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SC3058 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3058
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
400
V
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
600
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
7
V
VCEsat Collector-emitter saturation voltage IC=20A; IB=4A
1.0
V
VBEsat Base-emitter saturation voltage
IC=20A; IB=4A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
固IN电C半H导AN体GE SEMICONDUCTOR hFE-2
DC current gain
fT
Transition frequency
COB
Collector output capacitance
IC=1A ; VCE=5V
IC=20A ; VCE=5V
IC=4A ; VCE=10V
IE=0 ; VCB=10V;f=1MHz
15
50
10
40
30
420
MHz
pF
2
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