Transistor
PC — Ta
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
–25˚C
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
Zrb — IE
60
VCB=10V
f=2MHz
Ta=25˚C
50
40
30
20
10
0
– 0.1 – 0.3
–1
–3
–10
Emitter current IE (mA)
IC — VCE
240
Ta=25˚C
200
160
IB=100µA
120
80µA
80
60µA
40µA
40
20µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
hFE — IC
240
VCE=10V
200
160
Ta=75˚C
25˚C
120
–25˚C
80
40
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
Cre — VCE
3.0
f=10.7MHz
Ta=25˚C
2.5
2.0
1mA
1.5
1.0
IC=3mA
0.5
0
0.1 0.3 1 3 10 30 100
Collector to emitter voltage VCE (V)
2SC3314
IC — VBE
60
VCE=10V
50
25˚C
40
Ta=75˚C –25˚C
30
20
10
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
fT — IE
800
Ta=25˚C
700
600
500
400
VCE=10V
6V
300
200
100
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
PG — IE
24
VCE=10V
f=100MHz
Ta=25˚C
20
16
12
8
4
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
2