2SC5851FCTL Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SC5851FCTL

Silicon NPN Epitaxial

Renesas Electronics 

2SC5851

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

30





V IC = 10 µA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO

30





V IC = 1 mA, RBE = ∞

Emitter to base breakdown voltage

V(BR)EBO

5





V IE = 10 µA, IC = 0

Collector cutoff current

ICBO





0.5

µA VCB = 20 V, IE = 0

Emitter cutoff current

DC current transfer ratio

IEBO

hFE*1





0.5

µA VEB = 2 V, IC = 0

35



200

VCE = 12 V, IC = 2 mA

Collector to emitter saturation voltage

VCE(sat)





1.1

V IC = 10 mA, IB = 1 mA

Base to emitter voltage

VBE



 0.75

V VCE = 12 V, IC = 2 mA

Gain bandwidth product

fT



230



MHz VCE = 12 V, IC = 2 mA

Collector output capacitance

Cob



1.6



pF VCB = 10 V, IE = 0, f = 1 MHz

Noise figure

NF



5.5



dB VCE = 6 V, IC = 1 mA,

f = 100 MHz, Rg = 100 Ω

Notes: 1. The 2SC5851 is grouped by hFE as follows.

Grade

A

B

C

Mark

FA

FB

FC

hFE

35 to 75

60 to 120

100 to 200

Rev.1.00 Aug 10, 2005 page 2 of 6

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