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2SD1196 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza
componentes Descripción
Fabricante
2SD1196
Iscsemi
Inchange Semiconductor 
2SD1196 Datasheet PDF : 3 Pages
1 2 3
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1196
DESCRIPTION
·With TO-220 package
·High DC current gain.
·High current capacity and wide ASO.
·Low saturation voltage
·DARLINGTON
APPLICATIONS
·Motor drivers, printer hammer drivers,
relay drivers,voltage regulator control.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
110
100
6
8
12
1.75
40
150
-55~150
UNIT
V
V
V
A
A
W

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