Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A
VBEsat Base-emitter saturation voltage
IC=5A ;IB=0.5A
ICBO
Collector cut-off current
VCB=60V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=3A ; VCE=3V
Product Specification
2SD1243
MIN TYP. MAX UNIT
60
V
60
V
5
V
1.5
V
2.0
V
50
μA
50
μA
50
2