2SD1445 Ver la hoja de datos (PDF) - Inchange Semiconductor
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2SD1445 Datasheet PDF : 5 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1445 2SD1445A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2SD1445
20
V(BR)CEO
Collector-emitter
breakdown voltage
IC=10mA IB=0
V
2SD1445A
40
VCEsat Collector-emitter saturation voltage IC=10A ;IB=0.33A
0.6
V
VBEsat Base-emitter saturation voltage
IC=10A; IB=0.33A
1.5
V
ICBO
Collector cut-off
current
2SD1445 VCB=40V; IE=0
2SD1445A VCB=50V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
μA
50
μA
hFE-1
DC current gain
IC=0.1A ; VCE=2V
45
hFE-2
DC current gain
IC=3A ; VCE=2V
90
260
固IN电C半H导AN体GE SEMICONDUCTOR fT
Transition frequency
COB
Collector output capacitance
Switching times
ton
Trun-on time
tstg
Storage time
IC=0.5A; VCE=10V,f=10MHz
IE=0; f=1MHz ; VCB=10V
IC=3A
IB1=0.1A, IB2=-0.1A
120
MHz
200
pF
0.3
μs
0.4
μs
VCC=20V
tf
Fall time
0.1
μs
hFE-2 Classifications
Q
P
90-180
130-260
2
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