2SD1793 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SD1793 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1793
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V (Min.)
·High Switching Speed
APPLICATIONS
·Designed for audio frequency power amplifier and low
speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
VCEO
VCBO
VEBO
IC
ICM
PARAMETER
VALUE UNIT
www.iscsemi.cn Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continunous
Collector Current-Peak
100
V
100
V
7
V
10
A
15
A
IBB
Base Current-Continunous
0.5
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
1.0
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W
isc Website：www.iscsemi.cn
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