2SD1833 Ver la hoja de datos (PDF) - Inchange Semiconductor
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2SD1833 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1833
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 4A
·High Collector Power Dissipation
·Good Linearity of hFE
·Wide Area of Safe Operation
APPLICATIONS
·Designed for low frequency power amplifier applications.
www.iscsemi.cn ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Pulse
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
10
A
1.5
W
30
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
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