2SD1833 Ver la hoja de datos (PDF) - Inchange Semiconductor

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componentes Descripción

Fabricante

2SD1833

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1833

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB=B 0

80

V

V(BR)CBO Collector-Base Breakdown Voltage

IC= 50μA; IE= 0

100

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 50μA; IC= 0

5

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.4A

1.0

V

VBE(sat) Base-Emitter Saturation Voltage

IC= 4A; IB=B 0.4A

1.5

V

ICBO

Collector Cutoff Current

VCB= 100V; IE= 0

10 μA

IEBO

hFE

fT

COB

www.iscsemi.cn Emitter Cutoff Current

DC Current Gain

Current-Gain—Bandwidth Product

Output Capacitance

VEB= 4V; IC= 0

IC= 1A; VCE= 5V

IE= -0.5A; VCE= 5V

IE= 0; VCB= 10V; ftest= 1.0MHz

60

5

150

10

320

μA

MHz

pF

‹ hFE Classifications

D

E

F

60-120 100-200 160-320

isc Website：www.iscsemi.cn

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