Power Transistors
2SD2138, 2SD2138A
Silicon NPN triple diffusion planar type darlington
For power amplification
Complementary to 2SB1418 and 2SB1418A
■ Features
• High forward current transfer ratio hFE which has satisfactory linearity.
• Allowing supply with the radial taping
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage 2SD2138 VCBO
60
V
(Emitter open)
2SD2138A
80
Collector-emitter voltage 2SD2138 VCEO
60
V
(Base open)
2SD2138A
80
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC
2
A
Peak collector current
ICP
4
A
Collector power
PC
15
W
dissipation
Ta = 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
10.0±0.2
Unit: mm
5.0±0.1
1.0±0.2
0.65±0.1
0.35±0.1
2.5±0.2
1.2±0.1
1.48±0.2
0.65±0.1
1.05±0.1
0.55±0.1
2.5±0.2
C 1.0
2.25±0.2
0.55±0.1
123
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SD2138 VCEO IC = 30 mA, IB = 0
60
V
(Base open)
2SD2138A
80
Base-emitter voltage
Collector-base cutoff
current (Emitter open)
VBE
2SD2138 ICBO
2SD2138A
Collector-emitter
2SD2138 ICEO
cutoff current (Base open) 2SD2138A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Turn-off time
IEBO
hFE1
hFE2 *
VCE(sat)
fT
ton
toff
VCE = 4 V, IC = 2 A
VCB = 60 V, IE = 0
VCB = 80 V, IE = 0
VCE = 30 V, IB = 0
VCE = 40 V, IB = 0
VEB = 5 V, IC = 0
VCE = 4 V, IC = 1 A
VCE = 4 V, IC = 2 A
IC = 2 A, IB = 8 mA
VCE = 10 V, IC = 0.5 A, f = 1 MHz
IC = 2 A, IB1 = 8 mA, IB2 = −8 mA,
VCC = 50 V
1 000
2 000
2.8
V
100 µA
100
100 µA
100
100 µA
10 000
2.5
V
20
MHz
0.4
µs
4
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2
2 000 to 5 000 4 000 to 10 000
Publication date: September 2003
SJD00248BED
1