Transistors
2SD2391
1000
500
200
100
50
Ta=25°C
VCE=2V
20
10
5
2
1
−2m
−10m
−100m
−1 −2
EMITTER CURRENT : IE (A)
Fig.7 Gain bandwidth product
vs. emitter current
1000
Ta=25°C
500
f=1MHz
Cib
IE=0A
200
IC=0A
100
50
Cob
20
10
5
2
1
0.1 0.2 0.5 1 2
5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.8 Iutput capacitance vs. voltage
50
20
10 Ic max(Pulse)
5
2
P
W=100ms
1
500m
200m
100m
50m
20m Ta=25°C
10m Single pulse
0.2 0.5 1 2 5 10 20 50 100 200 500
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area
Rev.A 3/3