2SD2333 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SD2333 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=200mA , IC=0
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
hFE
DC current gain
IC=4A; IB=0.8A
VCB=500V; IE=0
IC=1A ; VCE=5V
VF
Diode forward voltage
IF=5A
Product Specification
2SD2333
MIN TYP. MAX UNIT
800
V
5
V
5.0
V
1.5
V
10 μA
8
2.0
V
2
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