2SD2236 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SD2236

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD2236

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Beakdown Voltage IC= 10mA; IB= 0

V(BR)CBO Collector-Base Beakdown Voltage

IC= 50μA; IE=0

V(BR)EBO Emitter-Base Beakdown Voltage

IE= 50μA; IC=0

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.3A

VBE(sat) Base-Emitter Saturation Voltage

IC= 3A; IB=B 0.3A

ICBO

Collector Cutoff Current

VCB= 100V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE

DC Current Gain

IC= 1A; VCE= 5V

MIN TYP. MAX UNIT

100

V

100

V

5

V

1.5

V

2.0

V

10 μA

10 μA

60

320

‹ hFE Classifications

D

E

F

60-120 100-200 160-320

isc Website：www.iscsemi.cn

2

Share Link: