2SD2237 Ver la hoja de datos (PDF) - Inchange Semiconductor
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2SD2237 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2237
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE=0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 2mA; IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A, IB=B 20mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A, IB=B 20mA
ICBO
Collector Cutoff current
VCB= 100V, IE= 0
IEBO
Emitter Cutoff current
VEB= 5V, IC= 0
hFE
DC Current Gain
IC= 2A; VCE= 3V
MIN TYP. MAX UNIT
100
V
100
V
5
V
2.0
V
2.5
V
10
μA
2
mA
2000
20000
isc Website：www.iscsemi.cn
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