D687 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
D687 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD687
DESCRIPTION
·
·With TO-220C package
·Low collector saturation voltage
·DARLINGTON
·High DC current gain
APPLICATIONS
·Switching applications
·Hammer drive,pulse motor drive
·Power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
固IN电C半H导AN体GE SEMICONDUTOR Maximum absolute ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VALUE
60
UNIT
V
VCEO
Collector-emitter voltage
Open base
40
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
3
A
PC
Collector power dissipation
TC=25℃
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-50~150
℃
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