D687 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
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Fabricante
D687 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD687
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0
40
V
VCEsat Collector-emitter saturation voltage IC=2A; IB=4mA
1.5
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IC=2A; IB=4mA
VCB=60V; IE=0
2.0
V
20
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
2.5 mA
hFE-1
DC current gain
IC=1A ; VCE=2V
2000
hFE-2
DC current gain
IC=3A ; VCE=2V
1000
Switching times
固IN电C半H导AN体GE SEMICONDUTOR ton
Turn-on time
0.1
ts
Storage time
IB1=-IB2=6mA
VCC=30V;RL=10Ω
1.0
tf
Fall time
0.2
μs
μs
μs
2
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