D826 Ver la hoja de datos (PDF) - SavantIC Semiconductor
Número de pieza
componentes Descripción
Fabricante
D826 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD826
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat
VBEsat
Collector-emitter saturation voltage IC=3A; IB=60mA(pulse)
Base-emitter saturation voltage
IC=3A; IB=60mA(pulse)
ICBO
Collector cut-off current
VCB=50V; IE=0
IEBO
hFE-1
hFE-2
fT
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
VEB=5V; IC=0
IC=0.5A ; VCE=2V
IC=3A ; VCE=2V(pulse)
IC=50mA ; VCE=10V
COB
Collector output capacitance
f=1MHz ; VCB=10V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=2A ;IB1=-IB2=0.2A
VCC=10V; RL=5A
hFE-1 Classifications
E
F
G
120-200 160-320 280-560
MIN TYP. MAX UNIT
0.5
V
1.5
V
1.0
µA
1.0
µA
120
560
95
120
MHz
45
pF
30
ns
300
ns
40
ns
2
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