2SJ201-O Ver la hoja de datos (PDF) - Toshiba

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Fabricante

2SJ201-O

Silicon P Channel MOS Type Field Effect Transistor

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Drain cut−off current

Gate leakage current

Drain−source breakdown voltage

Gate−source cut−off voltage

(Note 2)

Drain−source saturation voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

IDSS

IGSS

V (BR) DSS

VGS (OFF)

VDS (ON)

|Yfs|

Ciss

Coss

Crss

VDS = −200 V, VGS = 0

VDS = 0, VGS = ±20 V

ID = −10 mA, VGS = 0

VDS = −10 V, ID = −0.1 A

ID = −8 A, VGS = −10 V

VDS = −10 V, ID = −5 A

VDS = −30 V, VGS = 0, f = 1 MHz

VDS = −30 V, VGS = 0, f = 1 MHz

VDS = −30 V, VGS = 0, f = 1 MHz

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: VGS (OFF) Classification

O: −0.8 to −1.6, Y: −1.4 to −2.8

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Marking

2SJ201

Min Typ. Max Unit

―

― −1.0 mA

―

― ±0.5 μA

−200 ―

―

V

−0.8 ― −2.8

V

― −2.0 −5.0

V

―

5.0

―

S

― 1500 ―

― 400 ―

pF

― 230 ―

TOSHIBA

2SJ201

JAPAN

Part No. (or abbreviation code)

Lot No.

Note 3

Note 3: A line under a Lot No. identifies the indication of product Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27

January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

2

2009-12-10

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