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Número de pieza
componentes Descripción
2SK2595 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SK2595
Silicon N-Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
2SK2595 Datasheet PDF : 7 Pages
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7
2SK2595
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
V
DSS
V
GSS
I
D
I *
1
D(pulse)
Pch*
2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW
≤
10
µ
s, duty cycle
≤
1 %
2. Value at Tc = 25°C
Ratings
Unit
17
V
±10
V
1.1
A
5
A
20
W
150
°C
–45 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage drain
current
Gate to source leak current
Gate to source cutoff voltage
Input capacitance
Symbol
I
DSS
I
GSS
V
GS(off)
Ciss
Min.
—
—
0.6
—
Output capacitance
Coss
—
Output Power
Pout
37.3
Drain Rational
η
D
50
Typ
Max.
—
10
—
±5.0
—
1.3
68
—
27
—
38.45 —
60
—
Unit
µ
A
µ
A
V
pF
pF
dBm
%
Test Conditions
V
DS
= 12 V, V
GS
= 0
V
GS
= ±10V, V
DS
= 0
I
D
= 6mA, V
DS
= 12V
V
GS
= 5V, V
DS
= 0
f = 1MHz
V
DS
= 12V, V
GS
= 0
f = 1MHz
V
DS
= 12V,
f = 836.5MHz
Pin = 29.5dBm
V
DS
= 12V
Pout = 37.3dBm
f = 836.5MHz
Pin = 29.5dBm
2
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