2SK2596 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SK2596

Silicon N-Channel MOS FET UHF Power Amplifier

Renesas Electronics 

2SK2596

S11 Parameter vs. Frequency

.8 1

.6

.4

.2

1.5

2

3

4

5

S21 Parameter vs. Frequency

90°

Scale: 3 / div.

120°

60°

150°

30°

10

0

.2 .4 .6 .8 1 1.5 2 3 4 5 10

180°

0°

-10

-.2

-5

-4

-3

-.4

-2

-.6

-.8 -1

-1.5

Test condition: VDS = 12 V, IDQ = 50 mA, ZO = 50 Ω

100 to 2500 MHz (50 MHz step)

-150°

-30°

-120°

-60°

-90°

Test condition: VDS = 12 V, IDQ = 50 mA, ZO = 50 Ω

100 to 2500 MHz (50 MHz step)

S12 Parameter vs. Frequency

90°

Scale: 0.01 / div.

120°

60°

150°

30°

S22 Parameter vs. Frequency

.8 1

.6

.4

.2

1.5

2

3

4

5

180°

10

0°

0

.2 .4 .6 .8 1 1.5 2 3 4 5 10

-10

-150°

-30°

-120°

-60°

-90°

Test condition: VDS = 12 V, IDQ = 50 mA, ZO = 50 Ω

100 to 2500 MHz (50 MHz step)

-.2

-5

-4

-.4

-.6

-.8 -1

-3

-2

-1.5

Test condition: VDS = 12 V, IDQ = 50 mA, ZO = 50 Ω

100 to 2500 MHz (50 MHz step)

REJ03G0207-0400 Rev.4.00 Nov 08, 2007

Page 4 of 9

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