2SK3140 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SK3140

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK3140

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 6 mΩ typ.

• Low drive current

• 4 V gate drive device can be driven from 5 V source

Outline

TO–220CFM

ADE-208-767C (Z)

4th. Edition

February 1999

D

G

S

123

1. Gate

2. Drain

3. Source

Share Link: