Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Número de pieza
componentes Descripción
2SK3398(2002) Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
2SK3398
(Rev.:2002)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Toshiba
2SK3398 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK3398
r
th
-
t
w
3
1
Duty
=
0 5
03
0.2
0.1
0.1
0.05
0 02
0.03
Single Pulse
PDM
t
0.01
0 01
T
Duty
=
t/T
0 003
Rth (ch-c)
=
1.25°C/W
10
m
100
m
1m
10 m
100 m
1
10
Pulse width t
w
(S)
Safe operating area
100
50
ID max (pulsed)
*
30
ID max (continuous)
100
m
s
*
10
1 ms
*
5
3
DC operation
1
Tc
=
25°C
05
03
0.1
0.05
*
: Single nonrepetitive pulse
Tc
=
25°C
0.03
Curves must be derated
linearly with increase in
temperature.
0.01
1
10
VDSS max
100
Drain-source voltage V
DS
(V)
1000
E
AS
– T
ch
500
400
300
200
100
0
25
50
75
100
125
150
Channel temperature (initial) Tch (°C)
15 V
-
15 V
Test circuit
R
G
=
25
W
V
DD
=
90 V, L
=
4.3 mH
B
VDSS
I
AR
V
DD
V
DS
Wave form
Ε
AS
=
1
2
×
L
×
I2
×
ççèæ
BVDSS
BVDSS
-
VDD
÷÷øö
5
2002-09-04
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]