2SK3417 Ver la hoja de datos (PDF) - Toshiba
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2SK3417 Datasheet PDF : 6 Pages
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2SK3417
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3417
Switching Regulator Applications
• Reverse-recovery time: trr = 60 ns (typ.)
• Built-in high-speed flywheel diode
• Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
VDSS
VDGR
VGSS
ID
IDP
PD
EAR
500
V
500
V
±30
V
5
A
20
50
W
180
mJ
Avalanche current
IAR
Repetitive avalanche energy (Note 3)
EAR
Channel temperature
Tch
Storage temperature range
Tstg
5
A
5
mJ
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.5
°C/W
83.3
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.2 mH, RG = 25 Ω,
IAR = 5 A
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2006-11-06
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