2SK3417 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
2SK3417 Datasheet PDF : 6 Pages
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2SK3417
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
⎪Yfs⎪
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±100 μA, VDS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 2.5 A
VDS = 10 V, ID = 2.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯
⎯
±10
μA
±30 ⎯
⎯
V
⎯
⎯
100
μA
500 ⎯
⎯
V
2.0
⎯
4.0
V
⎯
1.6 1.8
Ω
2.5 4.0
⎯
S
⎯ 780 ⎯
⎯
60
⎯
pF
⎯ 200 ⎯
tr
10 V
VGS
0V
ton
ID = 2.5 A VOUT
⎯
12
⎯
⎯
25
⎯
RL = 90 Ω
ns
tf
VDD ∼− 225 V
⎯
15
⎯
Duty <= 1%, tw = 10 μs
toff
⎯
60
⎯
Qg
Qgs
VDD ∼− 400 V, VGS = 10 V, ID = 5 A
Qgd
⎯
17
⎯
⎯
11
⎯
nC
⎯
6
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯
⎯
5
A
⎯
⎯
20
A
⎯
⎯
−1.7
V
⎯
60
⎯
ns
⎯
0.1
⎯
μC
Marking
K3417
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-06
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