2SK3391 Ver la hoja de datos (PDF) - Renesas Electronics

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Fabricante

2SK3391

Silicon N-Channel MOS FET UHF Power Amplifier

Renesas Electronics 

2SK3391

Silicon N-Channel MOS FET

UHF Power Amplifier

Features

• High power output, High gain, High efficiency

PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. (f = 836 MHz)

• Compact package capable of surface mounting

Outline

UPAK

REJ03G0209-0200Z

(Previous ADE-208-847 (Z))

Rev.2.00

Apr.14.2004

D

1

3

2

3

1

G

2,4

S

1. Gate

4

2. Source

3. Drain

4. Source

Note: Marking is “JX“.

This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW < 1sec, Tch < 150°C

2. Value at Tc = 25°C

Symbol

VDSS

VGSS

ID

ID(pulse) Note1

Pch Note2

Tch

Tstg

Ratings

17

±10

0.3

0.75

5

150

–45 to +150

(Ta = 25°C)

Unit

V

V

A

A

W

°C

°C

Rev.2.00, Apr.14.2004, page 1 of 4

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