BSP121 Ver la hoja de datos (PDF) - Philips Electronics
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Fabricante
BSP121 Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel enhancement mode vertical
D-MOS transistor
Product specification
BSP152
handbook1, 0h0alfpage
RDS(on)
(Ω)
10
MRC210
1
0
2
4
6
8 VDS (V)10
VDS = 100 mV; Tj = 25 °C.
Fig.10 Drain-source on-resistance as a function of
gate-source voltage, typical values.
handbooIkD, ha5lfpage
(mA)
(1)
1
10-1
P
10-2
DC
δ
=
tp
T
10-3
1
tp
t
T
10
MRC212
tp
10 µs
100 µs
1 ms
10 ms
100 ms
1s
102 VDS (V) 103
δ = 0.01; Tamb = 25 °C.
(1) RDSon limitation.
Fig.11 SOAR curve.
handbook1, 0fu2ll pagewidδth=
0.75
Rth j-a
0.5
(K/W)
0.2
10
0.1
0.05
0.02
1
0.01
0
10-1
10-5
10-4
10-3
10-2
10-1
1
MRC211
P
δ=
tp
T
tp
t
T
10
102
tp (s)
103
Fig.12 Transient thermal resistance from junction to ambient as a function of pulse time.
April 1995
6
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