Austin Semiconductor, Inc.
SSRAM
AS5SS256K18
INTERLEAVED BURST ADDRESS TABLE (MODE=NC OR HIGH)
FIRST ADDRESS (EXTERNAL) SECOND ADDRESS (INTERNAL) THIRD ADDRESS (INTERNAL) FOURTH ADDRESS (INTERNAL)
X…X00
X…X01
X…X10
X…X11
X…X01
X…X00
X…X11
X…X10
X…X10
X…X11
X…X00
X…X01
X…X11
X…X10
X…X01
X…X00
LINEAR BURST ADDRESS TABLE (MODE=LOW)
FIRST ADDRESS (EXTERNAL) SECOND ADDRESS (INTERNAL) THIRD ADDRESS (INTERNAL) FOURTH ADDRESS (INTERNAL)
X…X00
X…X01
X…X10
X…X11
X…X01
X…X10
X…X11
X…X00
X…X10
X…X11
X…X00
X…X01
X…X11
X…X00
X…X01
X…X10
PARTIAL TRUTH TABLE FOR WRITE COMMANDS
FUNCTION
READ
READ
WRITE Byte "a"
WRITE Byte "b"
WRITE All Bytes
WRITE All Bytes
GW\
H
H
H
H
H
L
BWE\
H
L
L
L
L
X
BWa\
X
H
L
H
L
X
BWb\
X
H
H
L
L
X
NOTE: Using BWE\ and BWa\ through BWb\, any one or more bytes may be
written.
18
SA0, SA1, SA
MODE
ADV\
CLK
ADSC\
ADSP\
BWb\
BWa\
BWE\
GW\
CE\
CE2
CE2\
OE\
FUNCTIONAL BLOCK DIAGRAM
18
ADDRESS
16
18
REGISTER
2 SA0-SA1
Q1
BINARY
COUNTER AND
LOGIC
CLR
Q0
SA1'
SA0'
BYTE "b"
WRITE REGISTER
BYTE "a"
WRITE REGISTER
ENABLE
REGISTER
9
BYTE "b"
9
WRITE DRIVER
9
BYTE "a"
9
256K x 9 x 2
MEMORY
ARRAY
18 SENSE 18 OUTPUT
AMPS
BUFFERS
18
WRITE DRIVER
DQs
DQPa
DQPb
18
INPUT
REGISTERS
2
NOTE: The Functional Block Diagram illustrates simplified device operation. See Truth Table, pin descriptions and timing
diagrams for detailed information.
AS5SS256K18
Rev. 2.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3