AO4435 Ver la hoja de datos (PDF) - Alpha and Omega Semiconductor
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AO4435 Datasheet PDF : 5 Pages
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AO4435
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID = -250µA, VGS = 0V
-30
V
IDSS
Zero Gate Voltage Drain Current
VDS = -30V, VGS = 0V
TJ = 55°C
-1
µA
-5
IGSS
Gate-Body leakage current
VDS = 0V, VGS = ±25V
±100 nA
VGS(th) Gate Threshold Voltage
VDS = VGS ID = -250µA
-1.7 -2.3 -3
V
ID(ON)
On state drain current
VGS = -10V, VDS = -5V
-80
A
VGS = -20V, ID = -11A
11
14
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
VGS = -10V, ID = -10A
15
19
mΩ
15
18
VGS = -5V, ID = -5A
27
36
gFS
Forward Transconductance
VDS = -5V, ID = -10A
22
S
VSD
Diode Forward Voltage
IS = -1A,VGS = 0V
-0.74 -1
V
IS
Maximum Body-Diode Continuous Current
-3.5 A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1130 1400 pF
240
pF
155
pF
1
5.8
8
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V)
Qgs
Total Gate Charge
Gate Source Charge
VGS=-10V, VDS=-15V, ID=-10A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=1.5Ω,
RGEN=3Ω
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=-10A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs
18
24
nC
9.5
5.5
nC
3.3
nC
8.7
ns
8.5
ns
18
ns
7
ns
25
30
ns
12
nC
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev7: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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