AO4854
30V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
VDS=15V
8
ID=30A
6
4
2
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
Ciss
800
600
400
Coss
200
Crss
0
0
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
100
TA=25°C
TA=100°C
10
TA=150°C
TA=125°C
1
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 9: Single Pulse Avalanche capability (Note
C)
10000
1000
1000.0
100.0
10.0
RDS(ON)
limited
100µs
1.0
1ms
10ms
0.1 TJ(Max)=150°C
TA=25°C
0.0
0.01
0.1
DC
1
10
VDS (Volts)
10s
100
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
TA=25°C
100
10
1
0.00001
0.001
0.1
10
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
1000
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