AO4578 Ver la hoja de datos (PDF) - shenzhen wanhexing Electronics Co.,Ltd
Número de pieza
componentes Descripción
Fabricante
AO4578 Datasheet PDF : 5 Pages
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万和兴电子有限公司 www.whxpcb.com
AO4578
30V N-Channel MOSFET
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(ON) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
30V
20A
< 5.7mΩ
< 9mΩ
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
Bottom View
D
D
D
D
D
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.01mH C
VDS Spike
Power Dissipation B
100ns
TA=25°C
TA=70°C
VDS
VGS
ID
IDM
IAS
EAS
VSPIKE
PD
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
30
±20
20
15
120
40
8
36
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
31
59
Maximum Junction-to-Lead
Steady-State
RθJL
16
Max
40
75
24
Units
V
V
A
A
mJ
V
W
°C
Units
°C/W
°C/W
°C/W
Rev.1.0: August 2013
www.aosmd.com
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