AOD484 Ver la hoja de datos (PDF) - Alpha and Omega Semiconductor
Número de pieza
componentes Descripción
Fabricante
AOD484 Datasheet PDF : 5 Pages
| |||
AOD484
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
30
IDSS
Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250μA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
80
VGS=10V, ID=20A
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=15A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A, VGS=0V
IS
Maximum Body-Diode Continuous Current
V
1
μA
5
±100 nA
1.5 2.5
V
A
12.1 15
mΩ
19
18.5 23 mΩ
26
S
0.71 1
V
21
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
938 1220 pF
142
pF
99
pF
1.2 1.8
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=15V, ID=20A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.75Ω,
tD(off)
Turn-Off DelayTime
RGEN=3Ω
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/μs
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/μs
17.5 21 nC
8.4
nC
3
nC
4.1
nC
5
ns
12
ns
19
ns
6
ns
19
21
ns
10
12
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows25it.
B. The power dissipation P D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and i2s5more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E.
F.
The static characteristics in
These curves are based on
Figures 1 to 6 are obtained using <300
the junction-to-case thermal impedence
μwshipcuhlsisesm, edaustyurceydclwei0th.5t%hemdeavxi.c6e0mounted
to
a
large
heatsink,
assuming
a maximum junction temperature of T J(MAX)=175°C.
30
G. The maximum current rating is limited by bond-wires.
2.5
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still1a.i6r environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 1: Aug. 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
Share Link: 