AON7408 Ver la hoja de datos (PDF) - Alpha and Omega Semiconductor

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AON7408

30V N-Channel MOSFET

Alpha and Omega Semiconductor 

www.DataSheet.co.kr

AON7408

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

30

V

IDSS

Zero Gate Voltage Drain Current

VDS=30V, VGS=0V

TJ=55°C

1

µA

5

IGSS

Gate-Body leakage current

VDS=0V, VGS= ±20V

±100 nA

VGS(th) Gate Threshold Voltage

VDS=VGS , ID=250µA

1.5 2.1 2.6

V

ID(ON)

On state drain current

VGS=10V, VDS=5V

64

A

VGS=10V, ID=10A

15.3 20

RDS(ON) Static Drain-Source On-Resistance

TJ=125°C

23.3 30

mΩ

VGS=4.5V, ID=5A

22.7 32

gFS

Forward Transconductance

VDS=5V, ID=10A

17

S

VSD

Diode Forward Voltage

IS=1A,VGS=0V

0.75 1

V

IS

Maximum Body-Diode Continuous Current

3.8

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

373 448 pF

67

pF

41

pF

1.2 1.8

Ω

SWITCHING PARAMETERS

Qg

Qgs

Qgd

tD(on)

tr

tD(off)

tf

trr

Qrr

Total Gate Charge

Gate Source Charge

VGS=4.5V, VDS=15V, ID=10A

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=15V, RL=1.5Ω,

RGEN=3Ω

Turn-Off Fall Time

Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs

7.1 8.6 nC

1.2

nC

1.6

nC

4.3

ns

2.8

ns

15.8

ns

3

ns

10.5 12.6 ns

4.5

nC

A: The value of RθJA is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are

based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

H. The maximum current rating is limited by bond-wires.

Rev4: Apr-2011

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

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