AON2290 Ver la hoja de datos (PDF) - Alpha and Omega Semiconductor
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AON2290 Datasheet PDF : 5 Pages
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AON2290
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
100
IDSS
Zero Gate Voltage Drain Current
VDS=100V, VGS=0V
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
1.7
ID(ON)
On state drain current
VGS=10V, VDS=5V
25
VGS=10V, ID=4.5A
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=4A
gFS
Forward Transconductance
VDS=5V, ID=4.5A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=50V, ID=4.5A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=50V, RL=11Ω,
RGEN=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=4.5A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=500A/µs
Typ
2.3
59
110
77
13
0.78
415
32
3
1.4
6.5
3
1.5
1.5
4
2
15
2
16
44
Max Units
V
1
µA
5
±100 nA
2.8
V
A
72
mΩ
134
97 mΩ
S
1
V
3.5
A
pF
pF
pF
Ω
12 nC
6
nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any
given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Oct. 2012
www.aosmd.com
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