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AP2181DFMG-7

1.5A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH WITH OUTPUT DISCHARGE

Diodes Incorporated. 

AP2181D/AP2191D

1.5A SINGLE CHANNEL CURRENT-LIMITED POWER

SWITCH WITH OUTPUT DISCHARGE

Electrical Characteristics (TA = 25oC, VIN = +5.0V, unless otherwise stated)

Symbol

Parameter

Test Conditions

Min Typ. Max Unit

VUVLO Input UVLO

1.6 1.9 2.5

V

ISHDN Input Shutdown Current

Disabled, IOUT= 0

0.5 1

μA

IQ Input Quiescent Current

Enabled, IOUT= 0

45 70

μA

ILEAK Input Leakage Current

Disabled, OUT grounded

0.1 1

μA

IREV Reverse Leakage Current

Disabled, VIN= 0V, VOUT= 5V, IREV at VIN

0.1 1

μA

RDS(ON) Switch on-resistance

VIN = 5V,

IOUT= 1.5A

TA = 25°C SOT25, MSOP-8,

MSOP-8-EP, SO-8

DFN2018-6

-40°C ≤ TA ≤ 85°C

95 115

90 110

140 mΩ

VIN = 3.3V, TA = 25°C

IOUT= 1.5A -40°C ≤ TA ≤ 85°C

120 140

170

ISHORT Short-Circuit Current Limit

Enabled into short circuit, CL=120μF

2.0

A

ILIMIT Over-Load Current Limit

VIN= 5V, VOUT= 4V, CL=120μF, -40°C ≤ TA ≤85°C 1.6 2.1 2.6

A

ITrig Current limiting trigger threshold Output Current Slew rate (<100A/s) , CL=120μF

2.6

A

VIL EN Input Logic Low Voltage VIN = 2.7V to 5.5V

0.8

V

VIH EN Input Logic High Voltage VIN = 2.7V to 5.5V

2

V

ISINK EN Input leakage

VEN = 5V

1

μA

TD(ON) Output turn-on delay time

CL=1μF, Rload=10Ω

0.05

ms

TR Output turn-on rise time

CL=1μF, Rload=10Ω

0.6 1.5 ms

TD(OFF) Output turn-off delay time

CL=1μF, Rload=10Ω

0.05

ms

TF Output turn-off fall time

CL=1μF, Rload=10Ω

0.05 0.1 ms

RFLG FLG output FET on-resistance IFLG =10mA

20 40

Ω

TBlank FLG blanking time

CIN=10uF, CL=22μF

4

7 15

ms

TDIS Discharge time

CL= 1μF, VIN = 5V, disabled to VOUT < 0.5V

0.6

ms

RDIS Discharge resistance (Note 3) VIN = 5V, disabled, IOUT= 1mA

100

Ω

TSHDN Thermal Shutdown Threshold Enabled, Rload=1kΩ

140

°C

THYS Thermal Shutdown Hysteresis

25

°C

SOT25 (Note 4)

170

SO-8 (Note 4)

θJA

Thermal

Ambient

Resistance

Junction-to-

MSOP-8

(Note

4)

MSOP-8-EP (Note 5)

127

118

oC/W

67

DFN2018-6 (Note 5)

70

Notes:

3. The discharge function is active when the device is disabled (when enable is de-asserted). The discharge function offers a resistive discharge path

for the external storage capacitor.

4. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.

5. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground

plane.

AP2181D/2191D

Document number: DS32251 Rev. 1 - 2

4 of 18

www.diodes.com

June 2010

© Diodes Incorporated

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