AT-41586 Ver la hoja de datos (PDF) - HP => Agilent Technologies
Número de pieza
componentes Descripción
Fabricante
AT-41586 Datasheet PDF : 6 Pages
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2
AT-41586 Absolute Maximum Ratings[1]
Symbol
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation[2]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum[1]
1.5
20
12
60
500
150
-65 to 150
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. TCASE = 25°C.
3. See MEASUREMENTS section, “Thermal Resistance,” for more information.
Thermal Resistance:[3]
θjc =165°C/W
Electrical Specifications, TA = 25°C, VCE = 8 V
Symbol
Parameters and Test Conditions
Unit
NFo Optimum Noise Figure: IC = 10 mA
f = 1.0 GHz dB
f = 2.0 GHz
f = 4.0 GHz
GA
Gain @ NF0: IC = 10 mA
f = 1.0 GHz dB
f = 2.0 GHz
f = 4.0 GHz
|S21E|2 Insertion Power Gain: IC = 25 mA
f = 1.0 GHz dB
f = 2.0 GHz
P1dB Power Output @ 1 dB Gain Compression: IC = 25 mA f = 2.0 GHz dBm
G1dB 1 dB Compressed Gain: IC = 25 mA
f = 2.0 GHz dB
fT
Gain Bandwidth Product: IC = 25 mA
GHz
hFE Forward Current Transfer Ratio: IC = 10 mA
ICBO Collector Cutoff Current: VCB = 8 V
µA
IEBO Emitter Cutoff Current: VEB = 1 V
µA
Note:
1. For more information on outlines 86, refer to “Tape and Reel Packaging for Surface Mount Devices.”
Min.
30
Typ.
1.4
1.7
3.0
17.0
12.5
8.0
17.0
11.0
18.0
13.0
8.0
150
Max.
270
0.2
1.0
16
14
GA
12
10
4
NFO
2
0
0
10
20
30
I C(mA)
Figure 2. AT-41586 Optimum Noise
Figure and Associated Gain vs. Collec-
tor Current at VCE = 8 V, f = 2.0 GHz.
20
18
P1dB
16
14
G 1dB
12
10
8
6
4
2
0
10
20
30
40
COLLECTOR CURRENT
Figure 3. AT-41586 P1dB and G1dB vs.
Collector Current at VCE = 8 V,
f = 2.0 GHz.
20
1.0 GHz
15
2.0 GHz
10
4.0 GHz
5
0
0
5
10
25
30
40
I C(mA)
Figure 4. AT-41586 Insertion Power
Gain vs. Collector Current and
Frequency at 25°C, VCE = 8 V.
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