BCP53-10T1G Ver la hoja de datos (PDF) - ON Semiconductor
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BCP53-10T1G Datasheet PDF : 5 Pages
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BCP53 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
−100
−
Vdc
−
Collector−Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
− 80
−
Vdc
−
Collector−Emitter Breakdown Voltage
(IC = −100 mAdc, RBE = 1.0 kW)
V(BR)CER
−100
−
Vdc
−
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
− 5.0
−
Vdc
−
Collector−Base Cutoff Current
(VCB = − 30 Vdc, IE = 0)
ICBO
−
nAdc
−
−100
Emitter−Base Cutoff Current
(VEB = − 5.0 Vdc, IC = 0)
IEBO
−
nAdc
−
−100
ON CHARACTERISTICS
DC Current Gain
(IC = − 5.0 mAdc, VCE = − 2.0 Vdc)
All Part Types
(IC = −150 mAdc, VCE = − 2.0 Vdc)
BCP53, SBCP53
BCP53−10, SBCP53−10
BCP53−16, SBCP53−16, NSVBCP53−16
(IC = − 500 mAdc, VCE = − 2.0 Vdc)
All Part Types
hFE
−
25
−
−
40
−
250
63
−
160
100
−
250
25
−
−
Collector−Emitter Saturation Voltage
(IC = − 500 mAdc, IB = − 50 mAdc)
VCE(sat)
−
Vdc
−
− 0.5
Base−Emitter On Voltage
(IC = − 500 mAdc, VCE = − 2.0 Vdc)
VBE(on)
−
Vdc
−
−1.0
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mAdc, VCE = − 5.0 Vdc, f = 35 MHz)
fT
MHz
−
50
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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