BCR8PM-20LA(2010) Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

BCR8PM-20LA
(Rev.:2010)

Triac Medium Power Use

Renesas Electronics 

BCR8PM-20LA

Preliminary

Electrical Characteristics

Parameter

Symbol Min. Typ. Max. Unit

Test conditions

Repetitive peak off-state current

IDRM

—

—

2.0

mA Tj = 125C, VDRM applied

On-state voltage

VTM

—

—

1.6

V

Tc = 25C, ITM = 12 A,

Instantaneous measurement

Gate trigger voltageNote2



VFGT

—

—

1.5

V

Tj = 25C, VD = 6 V, RL = 6 ,



VRGT

—

—

1.5

V

RG = 330 



VRGT

—

—

1.5

V

Gate trigger currentNote2



IFGT

—

—

30

mA Tj = 25C, VD = 6 V, RL = 6 ,



IRGT

—

—

30

mA RG = 330 



IRGT

—

—

30

mA

Gate non-trigger voltage

Thermal resistance

Critical-rate of rise of off-state

commutating voltageNote4

VGD

0.2

—

—

V

Tj = 125C, VD = 1/2 VDRM

Rth (j-c)

—

—

3.7

C/W Junction to caseNote3

(dv/dt)c

10

—

—

V/s Tj = 125C

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.

4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

Test conditions

1. Junction temperature

Tj = 125C

2. Rate of decay of on-state commutating current

(di/dt)c = – 4.0 A/ms

3. Peak off-state voltage

VD = 400 V

Commutating voltage and current waveforms

(inductive load)

Supply Voltage

Time

Main Current

Main Voltage

(dv/dt)c

(di/dt)c

Time

Time

VD

R07DS0146EJ0200 Rev.2.00

Sep 16, 2010

Page 2 of 7

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