BD647 Ver la hoja de datos (PDF) - Inchange Semiconductor
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componentes Descripción
Fabricante
BD647 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BD647
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·High DC Current Gain
: hFE= 750(Min) @IC= 3A
·Low Saturation Voltage
·Complement to Type BD648
APPLICATIONS
·Designed for use as complementary AF push-pull output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICP
Collector Current-Peak
12
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@ Ta=25℃
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.3
A
2
W
62.5
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
2
62.5
℃/W
℃/W
isc Website：www.iscsemi.cn
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