BDT65B Ver la hoja de datos (PDF) - Comset Semiconductors
Número de pieza
componentes Descripción
Fabricante
BDT65B Datasheet PDF : 5 Pages
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SEMICONDUCTORS
BDT65-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCEO
Collector-Emitter
Breakdown Voltage
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
Test Condition(s)
IE= 0
VCB = VCBOmax
IE= 0
VCB = 1/2 VCBOmax
TJ= 150 °C
IE= 0
VCE = 1/2 VCEOmax
VEB= 5 V
IC= 0
IC= 30 mA
IB= 0
IC= 5 A
IB= 20 mA
IC= 10 A
IB= 100 mA
BDT65
BDT65A
BDT65B
BDT65C
BDT65
BDT65A
BDT65B
BDT65C
BDT65
BDT65A
BDT65B
BDT65C
BDT65
BDT65A
BDT65B
BDT65C
BDT65
BDT65A
BDT65B
BDT65C
BDT65
BDT65A
BDT65B
BDT65C
BDT65
BDT65A
BDT65B
BDT65C
Min Typ Max Unit
-
- 0.4 mA
-
-
2 mA
-
- 0.2 mA
-
-
60 -
80 -
100 -
120 -
-
-
-
-
5 mA
-
-
-
V
-
2
V
3
26/09/2012
COMSET SEMICONDUCTORS
3|5
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