BDW51C Ver la hoja de datos (PDF) - SavantIC Semiconductor

Número de pieza

componentes Descripción

Fabricante

BDW51C

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0

VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=0.5A

VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=2.5A

VBEsat

Base-emitter saturation voltage

IC=10A; IB=2.5A

VBE

Base-emitter on voltage

IC=5A ; VCE=4V

ICEO

Collector cut-off current

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

VCE=50V; IB=0

VCB=100V; IE=0

TC=150

VEB=5V; IC=0

hFE-1

DC current gain

IC=5A ; VCE=4V

hFE-2

DC current gain

IC=10A ; VCE=4V

fT

Transition frequency

IC=0.5A ; VCE=4V

Product Specification

BDW51C

MIN TYP. MAX UNIT

100

V

1.0

V

3.0

V

2.5

V

1.5

V

1.0

mA

0.5

5.0

mA

2.0

mA

20

150

5

3

MHz

2

Share Link: