BDX84 Ver la hoja de datos (PDF) - Inchange Semiconductor
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BDX84 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX84/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDX84
-45
BDX84A
-60
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
IC= -100mA; IB= 0
V
BDX84B
-80
BDX84C
-100
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB=B -10mA
VBE(on)-1 Base-Emitter On Voltage
IC= -5A; VCE= -3V
VBE(on)-2
ICEV
Base-Emitter On Voltage
BDX84
Collector
Cutoff Current
BDX84A
BDX84B
BDX84C
BDX84
IC= -10A; VCE= -3V
VCE= -45V; VBE= 1.5V
VCE= -45V; VBE= 1.5V; TC= 150℃
VCE= -60V; VBE= 1.5V
VCE= -60V; VBE= 1.5V; TC= 150℃
VCE= -80V; VBE= 1.5V
VCE= -80V; VBE= 1.5V; TC= 150℃
VCE= -100V; VBE= 1.5V
VCE= -100V; VBE= 1.5V; TC= 150℃
VCE= -20V; IB=B 0
-2.0 V
-2.8 V
-4.5 V
-0.5
-3.0
-0.5
-3.0
mA
-0.5
-3.0
-0.5
-3.0
ICEO
Collector
Cutoff Current
BDX84A VCE= -30V; IB=B 0
BDX84B VCE= -40V; IB=B 0
-1.0 mA
BDX84C VCE= -50V; IB=B 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-5.0 mA
hFE-1
DC Current Gain
IC= -1A; VCE= -3V
750
hFE-2
DC Current Gain
IC= -5A; VCE= -3V
1000
hFE-3
DC Current Gain
IC= -10A; VCE= -3V
250
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