BF1100R Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BF1100R Datasheet PDF : 14 Pages
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Philips Semiconductors
Dual-gate MOS-FETs
Product specification
BF1100; BF1100R
handbook,2h0alfpage
ID
(mA)
16
12
8
4
VG1 S = 1.4 V
1.3 V
1.2 V
1.1 V
1.0 V
0.9 V
MLD159
0
0
4
8
12
16
VDS (V)
VG2-S = 4 V.
Tj = 25 °C.
Fig.7 Output characteristics; typical values.
handbook,2h0alfpage
ID
(mA)
16
MLD160
VG2 S = 4 V 3 V 2.5 V
2V
12
1.5 V
8
4
1V
0
0
0.4
0.8
1.2
1.6
2.0
VG1 S (V)
VDS = 9 to 12 V.
Tj = 25 °C.
Fig.8 Transfer characteristics; typical values.
handboo2k,5h0alfpage
I G1
(µA)
200
150
100
50
0
0
VG2 S = 4 V
MLD161
3.5 V
3V
2.5 V
2V
1
2
3
VG1 S (V)
VDS = 9 to 12 V.
Tj = 25 °C.
Fig.9 Gate 1 current as a function of gate 1
voltage; typical values.
1995 Apr 25
handbook,4h0alfpage
y fs
(mS)
30
20
MLD162
VG2 S = 4 V
3.5 V
3V
10
2.5 V
2V
0
0
10
20
30
I D (mA)
VDS = 9 to 12 V.
Tj = 25 °C.
Fig.10 Forward transfer admittance as a function
of drain current; typical values.
6
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